? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c40 a i c110 t c = 110 c16 a i f110 t c = 110 c11 a i cm t c = 25 c, 1ms 100 a ssoa v ge = 15v, t j = 125 c, r g = 22 i cm = 32 a (rbsoa) clamped inductive load v ce v ces p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (to-220 & to-247) 1.13/10 nm/lb.in. f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb. t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c weight to-263 2.5 g to-220 3.0 g to-247 6.0 g ds99179b(08/10) hiperfast tm igbts c2-class high speed w/ diode v ces = 600v i c110 = 16a v ce(sat) 3.0v t fi(typ) = 33ns features z optimized for low switching losses z square rbsoa z anti-parallel ultra fast diode z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts ixga16n60c2d1 IXGP16N60C2D1 ixgh16n60c2d1 to-247 (ixgh) g d s c e g = gate c = collector e = emitter tab = collector to-263 aa (ixga) g c e to-220ab (ixgp) g e c (tab) c (tab) c (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.5 v i ces v ce = v ces , v ge = 0v 25 a t j = 125 c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 12a, v ge = 15v, note1 3.0 v t j = 125 c 1.8 v
ixys reserves the right to change limits, test conditions, and dimensions. ixga16n60c2d1 IXGP16N60C2D1 ixgh16n60c2d1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . reverse diode (fred) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 10a, v ge = 0v, note 1 3.0 v t j = 125 c 1.7 v i rm 2.5 a t rr 110 ns t rr 30 ns r thjc 2.5 c/w i f = 12a, v ge = 0v, -di f /dt = 100a/ s, v r = 100v, t j = 125c i f = 1a, v ge = 0v, -di f /dt = 100a/ s, v r = 30v symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 12a, v ce = 10v, note 1 8 s c ies 657 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 72 pf c res 22 pf q g(on) 25 nc q ge i c = 12a, v ge = 15v, v ce = 0.5 ? v ces 5 nc q gc 13 nc t d(on) 16 ns t ri 17 ns e on 0.16 mj t d(off) 75 ns t fi 33 ns e off 0.09 0.16 mj t d(on) 16 ns t ri 18 ns e on 0.27 mj t d(off) 115 ns t fi 100 ns e off 0.27 mj r thjc 0.83 c/w r thck to-220 0.50 c/w to-247 0.21 c/w inductive load, t j = 125c i c = 12a, v ge = 15v v ce = 400v, r g = 22 note 2 inductive load, t j = 25c i c = 12a, v ge = 15v v ce = 400v, r g = 22 note 2
? 2010 ixys corporation, all rights reserved ixga16n60c2d1 IXGP16N60C2D1 ixgh16n60c2d1 pins: 1 - gate 2 - collector 3 - emitter to-220 (ixgp) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 to-263 (ixga) outline 1. gate 2. collector 3. emitter 4. collector bottom side to-247 (ixgh) ad outline 1 = gate 2 = collector 3 = emitter
ixys reserves the right to change limits, test conditions, and dimensions. ixga16n60c2d1 IXGP16N60C2D1 ixgh16n60c2d1 fig. 1. output characteristics @ t j = 25oc 0 4 8 12 16 20 24 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ce - volts i c - amperes v ge = 15 v 13 v 12 v 9v 6v 8v 10v 7v 11v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 100 110 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 8v 7v 9v 11v 13v 12v 14v 10v fig. 3. output characteristics @ t j = 125oc 0 4 8 12 16 20 24 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v ge = 15 v 13 v 12 v 11 v 9v 6v 8v 7v 10v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0255075100125150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 12a i c = 6a i c = 24a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7 8 9 101112131415 v ge - volts v ce - volts i c = 24 a t j = 25oc 12 a 6 a fig. 6. input admittance 0 5 10 15 20 25 30 35 4567891011 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
? 2010 ixys corporation, all rights reserved ixga16n60c2d1 IXGP16N60C2D1 ixgh16n60c2d1 fig. 7. transconductance 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 5 10 15 20 25 30 35 100 150 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 125oc r g = 22 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 4 8 1216202428 q g - nanocoulombs v ge - volts v ce = 300v i c = 12a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
ixys reserves the right to change limits, test conditions, and dimensions. ixga16n60c2d1 IXGP16N60C2D1 ixgh16n60c2d1 fig. 12. inductive switching energy loss vs. gate resistance 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 20 30 40 50 60 70 80 90 100 r g - ohms e off - millijoules 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 400v i c = 12a i c = 24a fig. 15. inductive turn-off switching times vs. gate resistance 90 95 100 105 110 115 120 125 130 20 30 40 50 60 70 80 90 100 r g - ohms t f i - nanoseconds 40 80 120 160 200 240 280 320 360 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 12a i c = 24a fig. 13. inductive switching energy loss vs. collector current 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 12 13 14 15 16 17 18 19 20 21 22 23 24 i c - amperes e off - millijoules 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 e on - millijoules e off e on - - - - r g = 22 ? , v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 e on - millijoules e off e on - - - - r g = 22 ? , v ge = 15v v ce = 400v i c = 12a i c = 24a fig. 16. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 120 140 160 180 12 13 14 15 16 17 18 19 20 21 22 23 24 i c - amperes t f i - nanoseconds 50 60 70 80 90 100 110 120 130 140 t d(off) - nanoseconds t f i t d(off) - - - - r g = 22 ? , v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f i - nanoseconds 50 60 70 80 90 100 110 120 130 t d ( off ) - nanoseconds t f i t d(on) - - - - r g = 22 ? , v ge = 15v v ce = 400v i c = 24a, 12a
? 2010 ixys corporation, all rights reserved fig. 19. inductive turn-on switching times vs. collector current 10 15 20 25 30 35 40 45 50 12 13 14 15 16 17 18 19 20 21 22 23 24 i c - amperes t r i - nanoseconds 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 22 ? , v ge = 15v v ce = 400v t j = 25oc, 125oc fig. 20. inductive turn-on switching times vs. junction temperature 10 15 20 25 30 35 40 45 50 55 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 22 ? , v ge = 15v v ce = 400v i c = 24a i c = 12a fig. 18. inductive turn-on switching times vs. gate resistance 0 10 20 30 40 50 60 70 80 90 20 30 40 50 60 70 80 90 100 r g - ohms t r i - nanoseconds 10 15 20 25 30 35 40 45 50 55 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 12a i c = 24a ixys ref: ixg_16n60c3d1(3d)7-29-10 ixga16n60c2d1 IXGP16N60C2D1 ixgh16n60c2d1
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